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| High Power DPDT Switch with Logic Control CXG1213XR Description This CXG1213XR can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, dual-band W-CDMA) Features Low insertion loss 2 CMOS compatible control line Package Small package size: 12-pin XQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25C) Bias voltage Control voltage Operating temperature Storage temperature VDD Vctl Topr Tstg 7 5 -35 to +85 -65 to +150 V V C C GaAs MMICs are ESD sensitive devices.Special handing precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E05X06-PS CXG1213XR Block Diagram and Recommended Circuit RF2 GND CRF (27pF) 6 GND F3 7 5 F4 3 GND 4 CRF (27pF) RF3 RF1 CRF (1000pF) GND 8 F1 F5 F2 F6 2 CRF (1000pF) RF4 9 1 GND 10 11 12 Cbypass (100pF) VDD CTLA CTLB When using this IC, the following external components should be used: CRF: This capacitor is used for RF decoupling and must be used for all applications. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. Truth Table State 1 2 3 4 CTLA L L H H CTLB L H L H ON Path RF4 - RF3 RF4 - RF2 RF1 - RF3 RF1 - RF2 F1 OFF OFF OFF ON F2 OFF OFF ON OFF F3 ON OFF ON OFF F4 OFF ON OFF ON F5 OFF ON OFF OFF F6 ON OFF OFF OFF -2- CXG1213XR Electrical Characteristics (Ta = 25C) Item Symbol State Condition RF4 - RF3, 830 to 885MHz 1 1920 to 1980MHz 2110 to 2170MHz RF4 - RF2, 830 to 885MHz 2 Insertion loss IL 3 1920 to 1980MHz 2110 to 2170MHz RF1- RF3, 830 to 885MHz 1920 to 1980MHz 2110 to 2170MHz RF1 - RF2, 830 to 885MHz 4 1920 to 1980MHz 2110 to 2170MHz 2 RF4 - RF3, 830 to 885MHz 1920 to 2170MHz RF4 - RF2, 830 to 885MHz 1920 to 2170MHz RF1 - RF3, 830 to 885MHz 1920 to 2170MHz RF1 - RF2, 830 to 885MHz 1920 to 2170MHz 50 20 15 25 20 25 18 20 15 Min. Typ. 0.25 0.40 0.45 0.25 0.40 0.45 0.25 0.40 0.45 0.25 0.40 0.45 25 20 30 25 30 23 25 20 1.2 5 VDD = 2.85V 5MHz, 3.84MHz BW*1 10MHz, 3.84MHz BW*1 *1 *1 Max. 0.45 0.65 0.70 0.45 0.65 0.70 0.45 0.65 0.70 0.45 0.65 0.70 Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB -- s dBm 1 Isolation ISO. 4 3 VSWR Switching speed 1dB compression input power ACLR VSWR TSW P1dB ACLR1 ACLR2 2fo 3fo IDD Ictl 10 32 -60 -65 -50 -55 -70 -70 80 10 150 20 dBc dBc dBc dBc A A Harmonics Bias current Control current *1 VDD = 2.85V Vctl (H) = 1.85V Pin = 25dBm, 0/1.85V control, VDD = 2.85V, 830 to 840MHz, 1920 to 1980MHz -3- CXG1213XR DC Bias Conditions (Ta = 25C) Item Vctl (H) Vctl (L) VDD Min. 1.6 0 2.6 Typ. 1.85 -- 2.85 Max. 3.2 0.4 3.2 Unit V V V -4- CXG1213XR Package Outline (Unit: mm) LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18m -5- Sony Corporation |
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